Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
180 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
150
Maximum Base Emitter Saturation Voltage
0.9 V
Maximum Collector Base Voltage
180 V
Maximum Collector Emitter Saturation Voltage
0.25 V
Maximum Collector Cut-off Current
0.1µA
Height
1.65mm
Width
3.55mm
Maximum Power Dissipation
2 W
Minimum Operating Temperature
-55 °C
Dimensions
6.55 x 3.55 x 1.65mm
Maximum Operating Temperature
+150 °C
Length
6.55mm
Country of Origin
China
Product details
Darlington Transistors, Diodes Inc
Transistors, Diodes Inc
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P.O.A.
1000
P.O.A.
1000
Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
180 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
150
Maximum Base Emitter Saturation Voltage
0.9 V
Maximum Collector Base Voltage
180 V
Maximum Collector Emitter Saturation Voltage
0.25 V
Maximum Collector Cut-off Current
0.1µA
Height
1.65mm
Width
3.55mm
Maximum Power Dissipation
2 W
Minimum Operating Temperature
-55 °C
Dimensions
6.55 x 3.55 x 1.65mm
Maximum Operating Temperature
+150 °C
Length
6.55mm
Country of Origin
China
Product details