Fuji Electric 2MBI200U4B-120-50 Series IGBT Module, 200 A 1200 V, 7-Pin M233, Panel Mount

RS Stock No.: 462-861Brand: Fuji ElectricManufacturers Part No.: 2MBI200U4B-120-50
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Technical documents

Specifications

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.04 kW

Package Type

M233

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

92 x 45 x 30mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Fuji Electric 2MBI200U4B-120-50 Series IGBT Module, 200 A 1200 V, 7-Pin M233, Panel Mount

P.O.A.

Fuji Electric 2MBI200U4B-120-50 Series IGBT Module, 200 A 1200 V, 7-Pin M233, Panel Mount
Stock information temporarily unavailable.

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Technical documents

Specifications

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.04 kW

Package Type

M233

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

92 x 45 x 30mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.