Fuji Electric 7MBR25UA-120-50 3 Phase Bridge IGBT Module, 25 A 1200 V, 24-Pin M711, PCB Mount

RS Stock No.: 146-1716Brand: Fuji ElectricManufacturers Part No.: 7MBR25UA-120-50
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Technical documents

Specifications

Brand

Fuji Electric

Maximum Continuous Collector Current

25 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

115 W

Package Type

M711

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

24

Transistor Configuration

3 Phase

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Fuji Electric 7MBR25UA-120-50 3 Phase Bridge IGBT Module, 25 A 1200 V, 24-Pin M711, PCB Mount

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Fuji Electric 7MBR25UA-120-50 3 Phase Bridge IGBT Module, 25 A 1200 V, 24-Pin M711, PCB Mount
Stock information temporarily unavailable.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Technical documents

Specifications

Brand

Fuji Electric

Maximum Continuous Collector Current

25 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

115 W

Package Type

M711

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

24

Transistor Configuration

3 Phase

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.