Fuji Electric FGW40N120HD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 146-1725Brand: Fuji ElectricManufacturers Part No.: FGW40N120HD
brand-logo
View all in IGBTs

Technical documents

Specifications

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

340 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.03 x 20.95mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Country of Origin

Japan

Product details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Fuji Electric FGW40N120HD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

P.O.A.

Fuji Electric FGW40N120HD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

Technical documents

Specifications

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

340 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.03 x 20.95mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Country of Origin

Japan

Product details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.