Infineon 650V 2A, SiC Schottky Diode, 2+Tab-Pin TO-220 IDH02G65C5XKSA1

RS Stock No.: 133-9855Brand: InfineonManufacturers Part No.: IDH02G65C5XKSA1
brand-logo
View all in Schottky Diodes & Rectifiers

Technical documents

Specifications

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

2A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2+Tab

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

23A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Infineon 650V 2A, SiC Schottky Diode, 2+Tab-Pin TO-220 IDH02G65C5XKSA1
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Infineon 650V 2A, SiC Schottky Diode, 2+Tab-Pin TO-220 IDH02G65C5XKSA1
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Technical documents

Specifications

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

2A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2+Tab

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

23A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon