Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.: 911-4767Brand: InfineonManufacturers Part No.: SGW30N60FKSA1
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Technical documents

Specifications

Maximum Continuous Collector Current

41 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.95mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Infineon Discrete IGBT Transistors

Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

P.O.A.

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

Technical documents

Specifications

Maximum Continuous Collector Current

41 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.3 x 20.95mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Infineon Discrete IGBT Transistors

Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.