Nexperia BC856BW,115 PNP Transistor, -100 mA, -65 V, 3-Pin UMT
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
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P.O.A.
50
P.O.A.
50
Buy in bulk
| quantity | Unit price |
|---|---|
| 50 - 200 | P.O.A. |
| 250 - 950 | P.O.A. |
| 1000 - 2450 | P.O.A. |
| 2500 - 4950 | P.O.A. |
| 5000+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details