Hex N/P-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMCXB900UELZ

RS Stock No.: 153-0727Brand: NexperiaManufacturers Part No.: PMCXB900UELZ
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Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

DFN1010B-6, SOT1216

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

4025 mW

Maximum Gate Source Voltage

8 V

Width

1.05mm

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Height

0.36mm

Minimum Operating Temperature

-55 °C

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P.O.A.

Hex N/P-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMCXB900UELZ

P.O.A.

Hex N/P-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMCXB900UELZ
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

DFN1010B-6, SOT1216

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

4025 mW

Maximum Gate Source Voltage

8 V

Width

1.05mm

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

0.4 nC @ 10 V

Height

0.36mm

Minimum Operating Temperature

-55 °C