NXP PMBFJ110,215 N-Channel JFET, 25 V, Idss min. 10mA, 3-Pin SOT-23

RS Stock No.: 626-3241PBrand: NXPManufacturers Part No.: PMBFJ110,215
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Technical documents

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

min. 10mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

18 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Length

3mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

NXP PMBFJ110,215 N-Channel JFET, 25 V, Idss min. 10mA, 3-Pin SOT-23
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P.O.A.

NXP PMBFJ110,215 N-Channel JFET, 25 V, Idss min. 10mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
5 - 20P.O.A.
25 - 95P.O.A.
100 - 245P.O.A.
250 - 495P.O.A.
500+P.O.A.

Technical documents

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

min. 10mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

18 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Length

3mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.