Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
260 mW
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1.25 x 0.85 x 0.55mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
8000
P.O.A.
8000
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
260 mW
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1.25 x 0.85 x 0.55mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.