onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

RS Stock No.: 145-4338Brand: onsemiManufacturers Part No.: FGAF40N60UFTU
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Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

100 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

100 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.