onsemi FGL35N120FTDTU IGBT, 70 A 1200 V, 3-Pin TO-264, Through Hole

RS Stock No.: 145-4384Brand: ON SemiconductorManufacturers Part No.: FGL35N120FTDTU
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Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

70 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

368 W

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

20.2 x 5.2 x 26.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

onsemi FGL35N120FTDTU IGBT, 70 A 1200 V, 3-Pin TO-264, Through Hole

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

onsemi FGL35N120FTDTU IGBT, 70 A 1200 V, 3-Pin TO-264, Through Hole
Stock information temporarily unavailable.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

70 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

368 W

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

20.2 x 5.2 x 26.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.