onsemi MJE5742G NPN Darlington Transistor, 8 A 400 V HFE:50, 3-Pin TO-220
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
8 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
50
Maximum Base Emitter Saturation Voltage
3.5 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
5mA
Height
15.75mm
Width
4.82mm
Maximum Power Dissipation
100 W
Minimum Operating Temperature
-65 °C
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.28mm
Country of Origin
China
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
50
P.O.A.
50
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
8 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
50
Maximum Base Emitter Saturation Voltage
3.5 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
5mA
Height
15.75mm
Width
4.82mm
Maximum Power Dissipation
100 W
Minimum Operating Temperature
-65 °C
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.28mm
Country of Origin
China
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.