Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Country of Origin
Czech Republic
Stock information temporarily unavailable.
Please check again later.
P.O.A.
50
P.O.A.
50
Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Country of Origin
Czech Republic