onsemi MJF122G NPN Darlington Transistor, 8 A 100 V HFE:1000, 3-Pin TO-220FP
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3.5 V dc
Maximum Collector Cut-off Current
10µA
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
2 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Country of Origin
Korea, Republic Of
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
50
P.O.A.
50
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3.5 V dc
Maximum Collector Cut-off Current
10µA
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
2 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Country of Origin
Korea, Republic Of
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.