onsemi MMBF4392LT1G N-Channel JFET, 30 V, Idss 25 → 75mA, 3-Pin SOT-23
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
25 → 75mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
60 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Height
0.94mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
10
P.O.A.
10
Buy in bulk
| quantity | Unit price |
|---|---|
| 10 - 40 | P.O.A. |
| 50 - 190 | P.O.A. |
| 200 - 490 | P.O.A. |
| 500 - 990 | P.O.A. |
| 1000+ | P.O.A. |
Technical documents
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
25 → 75mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
60 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Height
0.94mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.