onsemi MMBTA14LG Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

RS Stock No.: 145-3358Brand: onsemiManufacturers Part No.: MMBTA14LT1G
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Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

300 mA

Maximum Collector Emitter Voltage

30 V

Maximum Emitter Base Voltage

10 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

5000

Maximum Collector Base Voltage

30 V

Maximum Collector Emitter Saturation Voltage

1.5 V

Maximum Collector Cut-off Current

100nA

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Maximum Power Dissipation

300 mW

Minimum Operating Temperature

-55 °C

Dimensions

3.04 x 1.4 x 1.01mm

Country of Origin

China

Product details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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Please check again later.

Stock information temporarily unavailable.

P.O.A.

onsemi MMBTA14LG Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

onsemi MMBTA14LG Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

300 mA

Maximum Collector Emitter Voltage

30 V

Maximum Emitter Base Voltage

10 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

5000

Maximum Collector Base Voltage

30 V

Maximum Collector Emitter Saturation Voltage

1.5 V

Maximum Collector Cut-off Current

100nA

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Maximum Power Dissipation

300 mW

Minimum Operating Temperature

-55 °C

Dimensions

3.04 x 1.4 x 1.01mm

Country of Origin

China

Product details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.