onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 134-9506Brand: onsemiManufacturers Part No.: NGTB40N120S3WG
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Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

454 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Common Emitter

Dimensions

16.25 x 5.3 x 21.34mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

4912pF

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

P.O.A.

onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

454 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Common Emitter

Dimensions

16.25 x 5.3 x 21.34mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

4912pF

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.