onsemi NGTG15N60S1EG IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole

RS Stock No.: 773-7419Brand: ON SemiconductorManufacturers Part No.: NGTG15N60S1EG
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Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

117 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.28 x 4.82 x 15.75mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

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P.O.A.

onsemi NGTG15N60S1EG IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

onsemi NGTG15N60S1EG IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole
Stock information temporarily unavailable.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

117 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.28 x 4.82 x 15.75mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C