Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZD3152PT1G

RS Stock No.: 163-1144Brand: onsemiManufacturers Part No.: NTZD3152PT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

1.7 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZD3152PT1G

P.O.A.

Dual P-Channel MOSFET, 430 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZD3152PT1G
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Width

1.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

1.7 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor