Semikron SK25GAL063 Single IGBT Module, 30 A 600 V, 4-Pin SEMITOP1, PCB Mount
Technical documents
Specifications
Brand
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITOP1
Configuration
Single
Mounting Type
PCB Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
31 x 24 x 15.43mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Country of Origin
Italy
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
1
P.O.A.
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 4 | P.O.A. |
| 5 - 9 | P.O.A. |
| 10 - 19 | P.O.A. |
| 20 - 49 | P.O.A. |
| 50+ | P.O.A. |
Technical documents
Specifications
Brand
SemikronMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITOP1
Configuration
Single
Mounting Type
PCB Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
31 x 24 x 15.43mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Country of Origin
Italy
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.