Semikron SKM100GB063D Dual IGBT Module, 130 A 600 V, 7-Pin SEMITRANS2, Screw Mount

RS Stock No.: 125-1116Brand: SemikronManufacturers Part No.: SKM100GB063D
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Technical documents

Specifications

Brand

Semikron

Maximum Continuous Collector Current

130 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

2

Package Type

SEMITRANS2

Configuration

Dual

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Half Bridge

Dimensions

94 x 34 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Slovakia

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Semikron SKM100GB063D Dual IGBT Module, 130 A 600 V, 7-Pin SEMITRANS2, Screw Mount

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Semikron SKM100GB063D Dual IGBT Module, 130 A 600 V, 7-Pin SEMITRANS2, Screw Mount
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

Semikron

Maximum Continuous Collector Current

130 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

2

Package Type

SEMITRANS2

Configuration

Dual

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Half Bridge

Dimensions

94 x 34 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Slovakia

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.