Semikron SKM150GAL12T4 Single IGBT Module, 232 A 1200 V, 5-Pin SEMITRANS2, Panel Mount

RS Stock No.: 687-4951Brand: SemikronManufacturers Part No.: SKM150GAL12T4
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Technical documents

Specifications

Maximum Continuous Collector Current

232 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Maximum Operating Temperature

+175 °C

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Width

34mm

Product details

Single IGBT Modules

SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Semikron SKM150GAL12T4 Single IGBT Module, 232 A 1200 V, 5-Pin SEMITRANS2, Panel Mount

P.O.A.

Semikron SKM150GAL12T4 Single IGBT Module, 232 A 1200 V, 5-Pin SEMITRANS2, Panel Mount
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 4P.O.A.
5 - 9P.O.A.
10 - 49P.O.A.
50 - 99P.O.A.
100+P.O.A.

Technical documents

Specifications

Maximum Continuous Collector Current

232 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Maximum Operating Temperature

+175 °C

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Width

34mm

Product details

Single IGBT Modules

SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.