Semikron SKM400GAL12E4 Single IGBT Module, 618 A 1200 V, 5-Pin SEMITRANS3, Panel Mount
Technical documents
Specifications
Brand
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS3
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 30.5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
1
P.O.A.
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 4 | P.O.A. |
| 5 - 9 | P.O.A. |
| 10 - 49 | P.O.A. |
| 50 - 99 | P.O.A. |
| 100+ | P.O.A. |
Technical documents
Specifications
Brand
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS3
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 30.5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Product details
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.