STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole

RS Stock No.: 686-8376PBrand: STMicroelectronicsManufacturers Part No.: STGP10NC60KD
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Technical documents

Specifications

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 9.15mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
Select packaging type

P.O.A.

STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 9.15mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.