N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T

RS Stock No.: 133-0155Brand: Texas InstrumentsManufacturers Part No.: CSD19537Q3T
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

100 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Please check again later.

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P.O.A.

N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Select packaging type

P.O.A.

N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

100 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments