Toshiba TTD1415B,S4X(S Dual PNP Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220SIS

Brand

Transistor Type

PNP

Maximum Continuous Collector Current

7 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

6 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

120 V

Maximum Collector Emitter Saturation Voltage

2 V

Maximum Collector Cut-off Current

2µA

Height

15mm

Width

4.5mm

Maximum Power Dissipation

25 W @ 25 °C

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Length

100mm

Base Current

0.7A

Country of Origin

Japan