N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3

RS Stock No.: 124-2251Brand: VishayManufacturers Part No.: SIHH26N60E-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

202 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

8.1mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.1mm

Forward Diode Voltage

1.2V

Series

E Series

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Select packaging type

P.O.A.

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

202 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

8.1mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.1mm

Forward Diode Voltage

1.2V

Series

E Series

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor