MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Infineon BUZ30A N-channel MOSFET Transistor, 21 A, 200 V SIPMOS, 3-Pin TO-220 Infineon N Recently Introduced 21 A 200 V 130 mΩ 4V 2.1V -20 V, +20 V TO-220 Through Hole 3 - Enhancement Power MOSFET 125 W 1400 pF @ 25 V - 250 ns 10 x 4.4 x 9.25mm 30 ns - SIPMOS 9.25mm 4.4mm 10mm - - +150 °C 1 -55 °C -
Infineon IPP110N20N3 G N-channel MOSFET Transistor, 88 A, 200 V OptiMOS 3, 3-Pin TO-220 Infineon N Recently Introduced 88 A 200 V 11 mΩ 4V 2V -20 V, +20 V TO-220 Through Hole 3 - Enhancement Power MOSFET 300 W 5340 pF @ 100 V 65 nC @ 10 V 41 ns 10.36 x 4.57 x 9.45mm 18 ns - OptiMOS 3 9.45mm 4.57mm 10.36mm - - +175 °C 1 -55 °C -
Infineon BSP171P P-channel MOSFET Transistor, 1.9 A, 60 V SIPMOS, 4-Pin SOT-223 Infineon P Recently Introduced 1.9 A 60 V 300 mΩ 2V 1V -20 V, +20 V SOT-223 Surface Mount 4 - Enhancement Small Signal 1.8 W 365 pF @ 25 V 13 nC @ 10 V 208 ns 6.5 x 3.5 x 1.6mm 6 ns - SIPMOS 1.6mm 3.5mm 6.5mm - - +150 °C 1 -55 °C -
Infineon IPW90R340C3 N-channel MOSFET Transistor, 15 A, 900 V CoolMOS C3, 3-Pin TO-247 Infineon N Recently Introduced 15 A 900 V 340 mΩ 3.5V 2.5V -20 V, +20 V TO-247 Through Hole 3 - Enhancement Power MOSFET 208 W 2400 pF @ 100 V 11 nC @ 10 V 400 ns 16.13 x 5.21 x 21.1mm 70 ns - CoolMOS C3 21.1mm 5.21mm 16.13mm - - +150 °C 1 -55 °C -
Infineon IPB320N20N3 G N-channel MOSFET Transistor, 34 A, 200 V OptiMOS 3, 3-Pin TO-263 Infineon N Recently Introduced 34 A 200 V 32 mΩ 4V 2V -20 V, +20 V TO-263 Surface Mount 3 - Enhancement Power MOSFET 136 W 1770 pF @ 100 V 22 nC @ 10 V 21 ns 10.31 x 9.45 x 4.57mm 11 ns - OptiMOS 3 4.57mm 9.45mm 10.31mm - - +175 °C 1 -55 °C -
Diodes Inc DMNH4005SCT N-channel MOSFET, 150 A, 40 V DMN, 3-Pin TO220AB DiodesZetex N Recently Introduced 150 A 40 V 4 mΩ 3V 1V 20 V TO220AB Through Hole 3 Single Enhancement - 165 W 2846 pF @ 20 V 48 @ 10 V nC 18.3 ns 10.66 x 9.01 x 4.82mm 6.6 ns - DMN 4.82mm 9.01mm 10.66mm 1.2V - +175 °C 1 -55 °C -
Diodes Inc DMNH4005SCT N-channel MOSFET, 150 A, 40 V DMN, 3-Pin TO220AB DiodesZetex N Recently Introduced 150 A 40 V 4 mΩ 3V 1V 20 V TO220AB Through Hole 3 Single Enhancement - 165 W 2846 pF @ 20 V 48 @ 10 V nC 18.3 ns 10.66 x 9.01 x 4.82mm 6.6 ns - DMN 4.82mm 9.01mm 10.66mm 1.2V - +175 °C 1 -55 °C -
Diodes Inc DMNH4026SSD-13 N-channel MOSFET, 7.5 A, 40 V DMN, 8-Pin SO DiodesZetex N Recently Introduced 7.5 A 40 V 32 mΩ 3V 1V ±20 V SO Surface Mount 8 - Enhancement - 2 W 1060 pF @ 20 V 19.1 @ 10 V nC 15.1 ns 4.95 X 3.95 X 1.5mm 5.3 ns - DMN 1.5mm 3.95mm 4.95mm 1V - +175 °C 1 -55 °C -
Diodes Inc DMNH4026SSD-13 N-channel MOSFET, 7.5 A, 40 V DMN, 8-Pin SO DiodesZetex N Recently Introduced 7.5 A 40 V 32 mΩ 3V 1V ±20 V SO Surface Mount 8 - Enhancement - 2 W 1060 pF @ 20 V 19.1 @ 10 V nC 15.1 ns 4.95 X 3.95 X 1.5mm 5.3 ns - DMN 1.5mm 3.95mm 4.95mm 1V - +175 °C 1 -55 °C -
Diodes Inc DMP3007SCG-13 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P Recently Introduced 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SCG-13 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P Recently Introduced 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SCG-7 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P Recently Introduced 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SCG-7 P-channel MOSFET, 50 A, 30 V DMP, 8-Pin V-DFN3333 DiodesZetex P Recently Introduced 50 A 30 V 13 mΩ 3V 1V ±25 V V-DFN3333 Surface Mount 8 Single Enhancement - 2.4 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.8 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-13 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P Recently Introduced 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-13 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P Recently Introduced 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-7 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P Recently Introduced 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SFG-7 P-channel MOSFET, 70 A, 30 V DMP, 8-Pin POWERDI3333 DiodesZetex P Recently Introduced 70 A 30 V 13 mΩ 3V 1V ±25 V POWERDI3333 Surface Mount 8 Single Enhancement - 2.8 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 3.35 x 3.35 x 0.78mm 4.3 ns - DMP 0.78mm 3.35mm 3.35mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SPS-13 P-channel MOSFET, 90 A, 30 V DMP, 8-Pin DI5060 DiodesZetex P Recently Introduced 90 A 30 V 16 mΩ 3V 1V ±25 V DI5060 Surface Mount 8 Single Enhancement - 2.7 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 5.1 x 6 x 1.1mm 4.8 ns - DMP 1.1mm 6mm 5.1mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP3007SPS-13 P-channel MOSFET, 90 A, 30 V DMP, 8-Pin DI5060 DiodesZetex P Recently Introduced 90 A 30 V 16 mΩ 3V 1V ±25 V DI5060 Surface Mount 8 Single Enhancement - 2.7 W 2826 pF @ -15 V 64.2 @ 10 V nC 306 ns 5.1 x 6 x 1.1mm 4.8 ns - DMP 1.1mm 6mm 5.1mm 1.2V - +150 °C 1 -55 °C -
Diodes Inc DMP6110SFDF-13 P-channel MOSFET, 4.2 A, 60 V DMP, 6-Pin U-DFN2020 DiodesZetex P Recently Introduced 4.2 A 60 V 130 mΩ 3V 1V ±20 V U-DFN2020 Surface Mount 6 Single Enhancement - 1.97 W 969 pF @ -30 V 17.2 @ 10 V nC 34 ns 2.05 x 2.05 x 0.58mm 4.4 ns - DMP 0.58mm 2.05mm 2.05mm 1.2V - +150 °C 1 -55 °C -
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