MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Transistor Configuration Pin Count Channel Mode Category Maximum Power Dissipation Height Number of Elements per Chip Typical Turn-On Delay Time Typical Turn-Off Delay Time Typical Power Gain Maximum Operating Temperature Length Series Width Minimum Operating Temperature Dimensions Forward Transconductance Transistor Material Forward Diode Voltage Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs
Infineon IRFB3306PBF N-channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB Infineon N new products only 160 A 60 V 4 mΩ 4V 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 230 W 9.02mm 1 15 ns 40 ns - +175 °C 10.66mm HEXFET 4.82mm -55 °C 10.66 x 4.82 x 9.02mm - Si - 4520 pF@ 50 V 85 nC @ 10 V
Semikron SK85MH10T Quad N-channel MOSFET, 80 A, 100 V, 16-Pin SEMITOP2 Semikron N new products only 80 A 100 V 13.5 mΩ 3.3V 2.5V ±20 V SEMITOP2 Through Hole Full Bridge 16 Enhancement - - 12mm 4 300 ns 1550 ns - +150 °C 41mm SK85MH 28mm -40 °C 41 x 28 x 12mm - - - - -
Infineon SPP17N80C3 N-channel MOSFET, 17 A, 800 V, 3-Pin TO-220 Infineon N new products only 17 A 800 V 290 mΩ 3.9V 2.1V ±20 V TO-220 Through Hole Single 3 Enhancement Power MOSFET 227 W 9.45mm 1 25 ns 72 ns - +150 °C 10.36mm CoolMOS C3 4.57mm -55 °C 10.36 x 4.57 x 9.45mm - - - 2300 pF @ 100 V 88 nC @ 10 V
Infineon IRFB3607PBF N-channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon N new products only 80 A 75 V 9 mΩ 4V 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 140 W 9.02mm 1 16 ns 43 ns - +175 °C 10.66mm HEXFET 4.82mm -55 °C 10.66 x 4.82 x 9.02mm - Si - 3070 pF@ 50 V 56 nC @ 10 V
Semikron SKM180A020 N-channel MOSFET, 180 A, 200 V, 4-Pin SEMITRANSM1 Semikron N new products only 180 A 200 V 11 mΩ 4V 2.1V ±20 V SEMITRANSM1 Surface Mount Single 4 Enhancement Power MOSFET - 29mm 1 100 ns 900 ns - +150 °C 78mm SKM 42mm -40 °C 78 x 42 x 29mm - - - 16 nF @ 25 V -
Infineon IRFB3206PBF N-channel MOSFET, 210 A, 60 V, 3-Pin TO-220AB Infineon N new products only 210 A 60 V 3 mΩ 4V 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 300 W 9.02mm 1 19 ns 55 ns - +175 °C 10.67mm HEXFET 4.83mm -55 °C 10.67 x 4.83 x 9.02mm - Si - 6540 pF@ 50 V 120 nC @ 10 V
Infineon BSP149 N-channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon N new products only 660 mA 200 V 1.8 Ω 1V 2.1V ±20 V SOT-223 Surface Mount Single 3 Depletion Small Signal 1.8 W 1.6mm 1 5.1 ns 45 ns - 150 °C 6.5mm SIPMOS 3.5mm -55 °C 6.5 x 3.5 x 1.6mm - Si - 326 pF @ 25 V 11 nC @ 5 V
Infineon IRFP250MPBF N-channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon N new products only 30 A 200 V 75 mΩ 4V 2V ±20 V TO-247AC Through Hole Single 3 Enhancement Power MOSFET 214 W 21.1mm 1 14 ns 41 ns - +175 °C 16.13mm HEXFET 5.2mm -55 °C 16.13 x 5.2 x 21.1mm - Si - 2159 pF @ 25 V 123 nC @ 10 V
Infineon BSP295 N-channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon N new products only 1.8 A 60 V 300 mΩ 2V 0.8V ±20 V SOT-223 Surface Mount Single 3 Enhancement Small Signal 1.8 W 1.6mm 1 5.4 ns 27 ns - 150 °C 6.5mm SIPMOS 3.5mm -55 °C 6.5 x 3.5 x 1.6mm - Si - 295 pF @ 25 V 14 nC @ 10 V
Infineon IPW60R045CP N-channel MOSFET, 60 A, 650 V, 3-Pin PG-TO-247-3-1 Infineon N new products only 60 A 650 V 45 mΩ - - ±20 V PG-TO-247-3-1 Through Hole Single 3 Enhancement Power MOSFET 431 W 21.1mm 1 30 ns 100 ns - 150 °C 16.13mm CoolMOS CP 5.21mm -55 °C 16.13 x 5.21 x 21.1mm - Si - 6800 pF @ 100 V 150 nC @ 10 V
Infineon IPW90R120C3 N-channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Infineon N new products only 36 A 900 V 120 mΩ 3.5V 2.5V ±20 V TO-247 Through Hole Single 3 Enhancement Power MOSFET 417 W 21.1mm 1 70 ns 400 ns - 150 °C 16.13mm CoolMOS C3 5.21mm -55 °C 16.13 x 5.21 x 21.1mm - Si - 6800 pF @ 100 V 270 nC @ 10 V
Infineon IRFP4332PBF N-channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC Infineon N new products only 57 A 250 V 33 mΩ 5V 3V ±30 V TO-247AC Through Hole Single 3 Enhancement Power MOSFET 360 W 20.3mm 1 - - - +175 °C 15.9mm HEXFET 5.3mm -40 °C 15.9 x 5.3 x 20.3mm - Si - 5860 pF@ 25 V 99 nC @ 10 V
Infineon IRFP4768PBF N-channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon N new products only 93 A 250 V 14.5 mΩ 5V 3V ±20 V TO-247AC Through Hole Single 3 Enhancement Power MOSFET 520 W 20.7mm 1 36 ns 57 ns - +175 °C 15.87mm HEXFET 5.31mm -55 °C 15.87 x 5.31 x 20.7mm - Si - 10880 pF@ 50 V 180 nC @ 10 V
Infineon SPP11N60C3 N-channel MOSFET, 11 A, 600 V, 3-Pin TO-220 Infineon N new products only 11 A 600 V 380 mΩ 3.9V 2.1V ±20 V TO-220 Through Hole Single 3 Enhancement Power MOSFET 125 W 4.4mm 1 10 ns 44 ns - 150 °C 8.64mm CoolMOS C3 10.26mm -55 °C 8.64 x 10.26 x 4.4mm - Si - 1200 pF @ 25 V 45 nC @ 10 V
ON Semiconductor 2SK3748-1E N-channel MOSFET, 4 A, 1500 V, 3-Pin TO-3P ON Semiconductor N new products only 4 A 1500 V 7 Ω 3.5V - ±20 V TO-3P Through Hole Single 3 Enhancement Power MOSFET 65 W 24.5mm 1 17 ns 360 ns - +150 °C 15.5mm - 5.5mm - 15.5 x 5.5 x 24.5mm - Si - 790 pF @ 30 V 80 nC @ 10 V
Infineon 2N7002 N-channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia N new products only 300 mA 60 V 4 Ω 2.5V 1.5V ±20 V SOT-23 Surface Mount Single 3 Enhancement Small Signal 0.5 W 1mm 1 3 ns 5.5 ns - +150 °C 2.9mm OptiMOS 1.3mm -55 °C 2.9 x 1.3 x 1mm - Si - 13 pF @ 25 V 0.4 nC @ 10 V
Infineon AUIRF3805S-7P N-channel MOSFET, 240 A, 55 V, 7-Pin D2PAK Infineon N new products only 240 A 55 V 2.6 mΩ 4V 2V ±20 V D2PAK Surface Mount Single 7 Enhancement Power MOSFET 300 W 4.55mm 1 23 ns 80 ns - +175 °C 10.35mm HEXFET 10.05mm -55 °C 10.35 x 10.05 x 4.55mm - Si - 7820 pF@ 25 V 130 nC @ 10 V
Infineon BSS84P P-channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon P new products only 170 mA 60 V 8 Ω 2V 1V ±20 V SOT-23 Surface Mount Single 3 Enhancement Small Signal 0.36 W 1mm 1 6.7 ns 8.6 ns - 150 °C 2.9mm SIPMOS 1.3mm -55 °C 2.9 x 1.3 x 1mm - Si - 15 pF @ 25 V 1 nC @ 10 V
Infineon IPA60R190C6 N-channel MOSFET, 20.2 A, 650 V, 3-Pin TO-220FP Infineon N new products only 20.2 A 650 V 190 mΩ 3.5V 2.5V ±20 V TO-220FP Through Hole Single 3 Enhancement Power MOSFET 151 W 9.45mm 1 15 ns 110 ns - 150 °C 10.36mm CoolMOS C6 4.57mm -55 °C 10.36 x 4.57 x 9.45mm - Si - 1400 pF @ 100 V 63 nC @ 10 V
Infineon IPB120P04P4L-03 P-channel MOSFET, 120 A, 40 V, 3-Pin TO-263 Infineon P new products only 120 A 40 V 5.2 mΩ 2.2V 1.2V ±16 V TO-263 Surface Mount Single 3 Enhancement Power MOSFET 136 W 4.4mm 1 21 ns 85 ns - +175 °C 10mm OptiMOS P 9.25mm -55 °C 10 x 9.25 x 4.4mm - Si - 11380 pF @ -25 V 180 nC @ 10 V
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