IGBT Transistors

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Part Details Brand Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Maximum Operating Temperature Minimum Operating Temperature Automotive Standard
IGBT 600V 10A Short Circuit Rated TO220F ON Semiconductor 20 A 600 V ±20V 42 W - TO-220F Through Hole N 3 - Single 10.36mm 4.9mm 16.07mm 10.36 x 4.9 x 16.07mm - - +150 °C -55 °C -
IGBT, Fairchild, HGTG30N60B3 ON Semiconductor 60 A 600 V ±20V 208 W - TO-247 Through Hole N 3 1MHz Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm - - +150 °C -55 °C -
IGBT, Fairchild, SGP23N60UFTU ON Semiconductor 23 A 600 V ±20V 100 W - TO-220 Through Hole N 3 1MHz Single 10.67mm 4.83mm 16.51mm 10.67 x 4.83 x 16.51mm - - +150 °C -55 °C -
ON Semiconductor FGA15S125P IGBT, 30 A 1250 V, 3-Pin TO-3PN ON Semiconductor 30 A 1250 V ±25V 136 W - TO-3PN Through Hole N 3 - Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm - - +175 °C -55 °C -
ON Semiconductor FGA30N120FTDTU IGBT, 60 A 1200 V, 3-Pin TO-3PN ON Semiconductor 60 A 1200 V ±25V 339 W - TO-3PN Through Hole N 3 - Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm - - +150 °C -55 °C -
ON Semiconductor FGA30N65SMD IGBT, 60 A 650 V, 3-Pin TO-3PN ON Semiconductor 60 A 650 V ±20V 300 W - TO-3PN Through Hole N 3 - Single 16.2mm 5mm 20.1mm 16.2 x 5 x 20.1mm - - +175 °C -55 °C -
ON Semiconductor FGA30S120P IGBT, 60 A 1300 V, 3-Pin TO-3PN ON Semiconductor 60 A 1300 V ±25V 348 W - TO-3PN Through Hole N 3 - Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm - - +175 °C -55 °C -
ON Semiconductor FGA40N65SMD IGBT, 80 A 650 V, 3-Pin TO-3PN ON Semiconductor 80 A 650 V ±20V 349 W - TO-3PN Through Hole N 3 - Single 16.2mm 5mm 20.1mm 16.2 x 5 x 20.1mm - - +175 °C -55 °C -
ON Semiconductor FGA50N100BNTDTU IGBT, 50 A 1000 V, 3-Pin TO-3P ON Semiconductor 50 A 1000 V ±25V 63 W - TO-3P Through Hole N 3 1MHz Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm - - +150 °C -55 °C -
ON Semiconductor FGA50S110P IGBT, 50 A 1100 V, 3-Pin TO-3PN ON Semiconductor 50 A 1100 V ±25V 300 W - TO-3PN Through Hole N 3 - Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm - - +175 °C -55 °C -
ON Semiconductor FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P ON Semiconductor 120 A 600 V ±20V 298 W - TO-3P Through Hole N 3 - Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm - - +150 °C -55 °C -
ON Semiconductor FGAF20N60SMD IGBT, 40 A 600 V, 3-Pin TO-3PF ON Semiconductor 40 A 600 V ±20V 75 W - TO-3PF Through Hole N 3 1MHz Single 15.7mm 3.2mm 26.7mm 15.7 x 3.2 x 26.7mm - - +175 °C -55 °C -
ON Semiconductor FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF ON Semiconductor 40 A 600 V ±20V 100 W - TO-3PF Through Hole N 3 - Single 15.5mm 5.5mm 26.5mm 15.5 x 5.5 x 26.5mm - - +150 °C -55 °C -
ON Semiconductor FGH40T65UPD IGBT, 80 A 650 V, 3-Pin TO-247 ON Semiconductor 80 A 650 V ±20V 268 W - TO-247 Through Hole N 3 1MHz Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm - - +175 °C -55 °C -
ON Semiconductor FGH50N3 IGBT, 75 A 300 V, 3-Pin TO-247 ON Semiconductor 75 A 300 V ±20V 463 W - TO-247 Through Hole N 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm - - +150 °C -55 °C -
ON Semiconductor FGH50T65UPD IGBT, 100 A 650 V, 3-Pin TO-247 ON Semiconductor 100 A 650 V ±20V 340 W - TO-247 Through Hole N 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm - - +175 °C -55 °C -
ON Semiconductor FGH60N60SFTU IGBT, 120 A 600 V, 3-Pin TO-247 ON Semiconductor 120 A 600 V ±20V 378 W - TO-247 Through Hole N 3 - Single 15.6mm 4.7mm 20.6mm 15.6 x 4.7 x 20.6mm - - +150 °C -55 °C -
ON Semiconductor FGH60N60SMD_F085 IGBT, 120 A 600 V, 3-Pin TO-247 ON Semiconductor 120 A 600 V ±20V 600 W - TO-247 Through Hole N 3 - Single 15.6mm 4.7mm 20.6mm 15.6 x 4.7 x 20.6mm - - +175 °C -55 °C -
ON Semiconductor FGI3040G2_F085 IGBT, 41 A 400 V, 3-Pin I2PAK (TO-262) ON Semiconductor 41 A 400 V ±10V 150 W - I2PAK (TO-262) Through Hole N 3 - Single 10.29mm 4.83mm 11.05mm 10.29 x 4.83 x 11.05mm - - +175 °C -55 °C AEC-Q100
ON Semiconductor FGL35N120FTDTU IGBT, 70 A 1200 V, 3-Pin TO-264 ON Semiconductor 70 A 1200 V ±25V 368 W - TO-264 Through Hole N 3 1MHz Single 20.2mm 5.2mm 26.4mm 20.2 x 5.2 x 26.4mm - - +150 °C -55 °C -
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