Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

RS Stock No.: 244-5394PBrand: InfineonManufacturers Part No.: FP25R12W2T4BOMA1
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Technical documents

Specifications

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

175 W

Number of Transistors

7

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P.O.A.

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Select packaging type

P.O.A.

Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Maximum Continuous Collector Current

39 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

175 W

Number of Transistors

7