Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

RS Stock No.: 110-7425Brand: InfineonManufacturers Part No.: IGW40N65F5FKSA1
brand-logo
View all in IGBTs

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

250 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

2500pF

Maximum Operating Temperature

+175 °C

Energy Rating

0.46mJ

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

P.O.A.

Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 4.

Production -

Available in multiples of 4.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

4

Available in multiples of 4
4P.O.A.
8P.O.A.
12P.O.A.
16P.O.A.
20P.O.A.
24P.O.A.
28P.O.A.
32P.O.A.
36P.O.A.
40P.O.A.
44P.O.A.
48P.O.A.
52P.O.A.
56P.O.A.
60P.O.A.

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

250 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

2500pF

Maximum Operating Temperature

+175 °C

Energy Rating

0.46mJ

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.