Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

RS Stock No.: 258-7063Brand: InfineonManufacturers Part No.: IKB10N60TATMA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

110 W

Number of Transistors

1

Package Type

TO-263-3

Configuration

Single Collector, Single Emitter, Single Gate

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P.O.A.

Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

P.O.A.

Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

110 W

Number of Transistors

1

Package Type

TO-263-3

Configuration

Single Collector, Single Emitter, Single Gate