Technical documents
Specifications
Channel Type
N
Leakage Current
0.6mA
Pin Count
3
Maximum Drain Source Resistance
4.4 mO
Transistor Configuration
Single
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Package Type
TO-247
Maximum Power Dissipation
268 W
Batteries
3 x AAA BatteryStock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
P.O.A.
onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247
Select packaging type
Standard
10
P.O.A.
onsemi AFGHL50T65SQ IGBT, 50 A 650 V, 3-Pin TO-247
Stock information temporarily unavailable.
Select packaging type
Standard
10
Technical documents
Specifications
Channel Type
N
Leakage Current
0.6mA
Pin Count
3
Maximum Drain Source Resistance
4.4 mO
Transistor Configuration
Single
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Package Type
TO-247
Maximum Power Dissipation
268 W
Batteries
3 x AAA Battery