onsemi BC848CPDW1T1G Dual NPN/PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363

RS Stock No.: 184-4178Brand: onsemiManufacturers Part No.: BC848CPDW1T1G
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Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN/PNP

Maximum DC Collector Current

200 mA

Maximum Collector Emitter Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Maximum Power Dissipation

380 mW

Minimum DC Current Gain

420

Maximum Collector Base Voltage

30 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

100 MHz

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2.2 x 1.35 x 1mm

Country of Origin

China

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P.O.A.

onsemi BC848CPDW1T1G Dual NPN/PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

onsemi BC848CPDW1T1G Dual NPN/PNP Transistor, 200 mA, 30 V, 6-Pin SOT-363
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN/PNP

Maximum DC Collector Current

200 mA

Maximum Collector Emitter Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Maximum Power Dissipation

380 mW

Minimum DC Current Gain

420

Maximum Collector Base Voltage

30 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

100 MHz

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2.2 x 1.35 x 1mm

Country of Origin

China