onsemi MBT2222ADW1T1G Dual NPN Transistor, 600 mA, 40 V, 6-Pin SOT-363
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
75 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Country of Origin
China
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
3000
P.O.A.
3000
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
75 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Country of Origin
China
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.