onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole

RS Stock No.: 202-5682Brand: onsemiManufacturers Part No.: NXH35C120L2C2SG
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Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

35 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Number of Transistors

6

Package Type

DIP26

Configuration

3 Phase

Mounting Type

Through Hole

Channel Type

N

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P.O.A.

onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

35 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Number of Transistors

6

Package Type

DIP26

Configuration

3 Phase

Mounting Type

Through Hole

Channel Type

N