MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 12368 products
P.O.A.
Check stock
10
Infineon
MOSFET
Type N
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270A
40V
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-
DirectFET
DirectFET
Surface
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-
-
1mΩ
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-
-
-
±20 V
1.3V
-55°C
220nC
3.8W
175°C
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-
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-
RoHS, Lead-Free
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No
P.O.A.
Check stock
1
Infineon
MOSFET
Type N
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-
270A
40V
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-
DirectFET
DirectFET
Surface
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1mΩ
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-
±20 V
1.3V
-55°C
220nC
3.8W
175°C
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-
-
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-
RoHS, Lead-Free
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-
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-
-
-
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No
Infineon
MOSFET
Type N
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-
1.9A
55V
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-
-
SOT-223
HEXFET Fifth Generation
Surface
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-
-
-
0.16Ω
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-
-
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20 V
1V
-55°C
7nC
2.1W
150°C
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-
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Lead-Free
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No
P.O.A.
Check stock
10
Infineon
MOSFET
Type N
-
-
-
1.9A
55V
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-
-
SOT-223
HEXFET Fifth Generation
Surface
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-
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-
0.16Ω
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-
-
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20 V
1V
-55°C
7nC
2.1W
150°C
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-
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-
Lead-Free
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-
-
-
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-
-
-
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-
No
P.O.A.
Check stock
2
Infineon
MOSFET
Type N
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-
120A
75V
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-
TO-263
HEXFET
PCB
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-
-
-
6.3mΩ
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-
-
-
-
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-
1.3V
-55°C
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200W
175°C
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-
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No
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-
No
P.O.A.
Check stock
5
Infineon
MOSFET
Type N
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-
-
43A
150V
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-
TO-263
HEXFET
Surface
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-
3
-
0.042Ω
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-
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-
20 V
1.3V
-55°C
20nC
200W
175°C
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-
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-
EIA 418
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No
P.O.A.
Check stock
5
Infineon
MOSFET
Type N
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-
43A
150V
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-
TO-263
HEXFET
Surface
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3
-
0.042Ω
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-
-
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-
20 V
1.3V
-55°C
20nC
200W
175°C
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-
EIA 418
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No
P.O.A.
Check stock
2
Infineon
MOSFET
Type N
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-
76A
200V
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-
TO-220
HEXFET
PCB
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-
20mΩ
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-
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-
20 V
1.3V
-55°C
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375W
175°C
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-
No
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No
P.O.A.
Check stock
2
Infineon
MOSFET
Type N
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-
88A
100V
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-
TO-263
HEXFET
PCB
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-
10mΩ
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-
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-
1.3V
-55°C
-
200W
175°C
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No
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No
Infineon
IR MOSFET
Type P
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-
-4A
-30V
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-
SO-8
HEXFET
Through Hole
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-
8
-
160mΩ
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-
Dual
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-
±20 V
-
-55°C
16.7nC
-
175°C
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-
1.75mm
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5mm
RoHS
4 mm
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-
No
P.O.A.
Check stock
10
Infineon
IR MOSFET
Type P
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-
-4A
-30V
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-
SO-8
HEXFET
Through Hole
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-
8
-
160mΩ
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-
Dual
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-
-
±20 V
-
-55°C
16.7nC
-
175°C
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-
1.75mm
-
5mm
RoHS
4 mm
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-
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-
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-
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-
No
Infineon
MOSFET
Type P
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-
-21A
-30V
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-
PQFN
HEXFET
Surface
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8
-
3.7mΩ
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-
-
-
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-
20 V
-1.2V
-55°C
58nC
3.1W
150°C
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-
0.39mm
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5mm
RoHS
6 mm
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No
P.O.A.
Check stock
5
Infineon
MOSFET
Type P
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-
-21A
-30V
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-
PQFN
HEXFET
Surface
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-
8
-
3.7mΩ
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-
-
-
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-
20 V
-1.2V
-55°C
58nC
3.1W
150°C
-
-
0.39mm
-
5mm
RoHS
6 mm
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No
Infineon
MOSFET
Type P
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-
5A
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-
SO-8
HEXFET
Surface
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8
-
0.13Ω
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20 V
-1.2V
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27nC
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-
1.75mm
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5mm
RoHS
4 mm
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No
P.O.A.
Check stock
10
Infineon
MOSFET
Type P
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-
5A
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-
SO-8
HEXFET
Surface
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8
-
0.13Ω
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20 V
-1.2V
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27nC
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-
1.75mm
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5mm
RoHS
4 mm
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No
P.O.A.
Check stock
10
P.O.A.
Check stock
5
Infineon
MOSFET
Type P, Type N
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-
6.8A
30V
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-
SO-8
IRF
Surface
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8
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±20 V
1.2V
-55°C
8.1nC
2W
150°C
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-
RoHS Compliant
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