Infineon BFR360FH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 6 V, 3-Pin TSFP

RS Stock No.: 892-2302Brand: InfineonManufacturers Part No.: BFR360FH6327XTSA1
brand-logo
View all in Bipolar Transistors

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

6 V

Package Type

TSFP

Mounting Type

Surface Mount

Maximum Power Dissipation

210 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

14 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

1.2 x 0.8 x 0.55mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Stock information temporarily unavailable.

P.O.A.

Infineon BFR360FH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 6 V, 3-Pin TSFP
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

P.O.A.

Infineon BFR360FH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 6 V, 3-Pin TSFP
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

6 V

Package Type

TSFP

Mounting Type

Surface Mount

Maximum Power Dissipation

210 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

14 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

1.2 x 0.8 x 0.55mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon