Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Country of Origin
Austria
Stock information temporarily unavailable.
P.O.A.
Infineon FF450R12ME7BPSA1, P-Channel Dual IGBT, 450 A 1200 V AG-ECONOD, Through Hole
1
P.O.A.
Infineon FF450R12ME7BPSA1, P-Channel Dual IGBT, 450 A 1200 V AG-ECONOD, Through Hole
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Country of Origin
Austria