Technical documents
Specifications
Brand
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Pin Count
28
Package Type
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Time Delay
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Country of Origin
Malaysia
Product details
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
Maximum blocking voltage 600V
Six independent drivers
Control via 3.3V logic
Under-voltage detection with hysteresis
Over-current detection
MOSFET & IGBT Drivers, Infineon (International Rectifier)
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P.O.A.
1000
P.O.A.
1000
Technical documents
Specifications
Brand
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Pin Count
28
Package Type
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Time Delay
800ns
Number of Drivers
6
Bridge Type
Full Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Country of Origin
Malaysia
Product details
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
Maximum blocking voltage 600V
Six independent drivers
Control via 3.3V logic
Under-voltage detection with hysteresis
Over-current detection