Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole

RS Stock No.: 284-664Brand: InfineonManufacturers Part No.: F3L225R12W3H3B11BPSA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

225 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

4

Maximum Power Dissipation

20 mW

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

AG-62MMHB

Mounting Type

Through Hole

Channel Type

N

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P.O.A.

Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole

8

Available in multiples of 1
8P.O.A.
16P.O.A.
24P.O.A.
32P.O.A.
40P.O.A.
48P.O.A.
56P.O.A.
64P.O.A.
72P.O.A.
80P.O.A.
88P.O.A.
96P.O.A.
104P.O.A.
112P.O.A.
120P.O.A.

P.O.A.

Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
Stock information temporarily unavailable.

8

Available in multiples of 1
8P.O.A.
16P.O.A.
24P.O.A.
32P.O.A.
40P.O.A.
48P.O.A.
56P.O.A.
64P.O.A.
72P.O.A.
80P.O.A.
88P.O.A.
96P.O.A.
104P.O.A.
112P.O.A.
120P.O.A.

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

225 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

4

Maximum Power Dissipation

20 mW

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

AG-62MMHB

Mounting Type

Through Hole

Channel Type

N