Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
DFN1006B, SOT-883B
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
65 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.05 x 0.65 x 0.36mm
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P.O.A.
10000
P.O.A.
10000
Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
65 V
Package Type
DFN1006B, SOT-883B
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
65 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.05 x 0.65 x 0.36mm