Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V dc
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
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P.O.A.
Production pack (Box)
20
P.O.A.
Production pack (Box)
20
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V dc
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia