onsemi BD682STU PNP Darlington Transistor, -4 A 100 V HFE:750, 3-Pin TO-126
Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-4 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
-5 V
Package Type
TO-126
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
-100 V
Maximum Collector Emitter Saturation Voltage
-2.5 V
Maximum Collector Cut-off Current
-500µA
Maximum Operating Temperature
+150 °C
Length
8mm
Height
11mm
Width
3.25mm
Maximum Power Dissipation
14 W
Dimensions
8 x 3.25 x 11mm
Product details
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
60
P.O.A.
60
Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-4 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
-5 V
Package Type
TO-126
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
-100 V
Maximum Collector Emitter Saturation Voltage
-2.5 V
Maximum Collector Cut-off Current
-500µA
Maximum Operating Temperature
+150 °C
Length
8mm
Height
11mm
Width
3.25mm
Maximum Power Dissipation
14 W
Dimensions
8 x 3.25 x 11mm
Product details
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.