Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
90 V
Package Type
TO-204AA
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Minimum DC Current Gain
25
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
4 V
Pin Count
2
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Dimensions
39.37 x 26.67 x 8.51mm
Country of Origin
Mexico
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
100
P.O.A.
100
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
90 V
Package Type
TO-204AA
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Minimum DC Current Gain
25
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
4 V
Pin Count
2
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Dimensions
39.37 x 26.67 x 8.51mm
Country of Origin
Mexico
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.