onsemi TIP120TU Dual NPN Darlington Transistor, 8 A 60 V HFE:1000, 3-Pin TO-220
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Length
10.67mm
Width
4.83mm
Maximum Power Dissipation
65 W
Dimensions
10.67 x 4.83 x 16.51mm
Maximum Operating Temperature
+150 °C
Height
16.51mm
Product details
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
50
P.O.A.
50
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
4 V
Maximum Collector Cut-off Current
0.5mA
Length
10.67mm
Width
4.83mm
Maximum Power Dissipation
65 W
Dimensions
10.67 x 4.83 x 16.51mm
Maximum Operating Temperature
+150 °C
Height
16.51mm
Product details
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.