Technical documents
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
550nm
Package Type
TO-18
Amplifier Function
No
Mounting Type
Through Hole
Number of Pins
2
Diode Material
Si
Height
0.2in
Diameter
5.33mm
Series
OSD
Polarity
Reverse
Country of Origin
Malaysia
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P.O.A.
OSI Optoelectronics, OSD1-E IR Si Photodiode, Through Hole TO-18
1
P.O.A.
OSI Optoelectronics, OSD1-E IR Si Photodiode, Through Hole TO-18
Stock information temporarily unavailable.
1
Technical documents
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Infrared
Wavelength of Peak Sensitivity
550nm
Package Type
TO-18
Amplifier Function
No
Mounting Type
Through Hole
Number of Pins
2
Diode Material
Si
Height
0.2in
Diameter
5.33mm
Series
OSD
Polarity
Reverse
Country of Origin
Malaysia