OSI Optoelectronics, PIN-44DP IR Si Photodiode, Through Hole TO-8

RS Stock No.: 183-7127Brand: OSI OptoelectronicsManufacturers Part No.: PIN-44DPIMPA: 0
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Technical documents

Specifications

Number of Pins

2

Sound Pressure Level

105dB/mW

Diode Material

Si

Polarity

Reverse

Spectrums Detected

Infrared

Height

0.205in

Minimum Wavelength Detected

350nm

Peak Photo Sensitivity

0.6A/W

Wavelength of Peak Sensitivity

970nm

Mounting Type

Through Hole

Maximum Wavelength Detected

1100nm

Package Type

TO-8

Diameter

13.97mm

Typical Rise Time

475ns

Series

PIN

Brand

OSI Optoelectronics

Country of Origin

United States

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P.O.A.

OSI Optoelectronics, PIN-44DP IR Si Photodiode, Through Hole TO-8

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

OSI Optoelectronics, PIN-44DP IR Si Photodiode, Through Hole TO-8
Stock information temporarily unavailable.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Technical documents

Specifications

Number of Pins

2

Sound Pressure Level

105dB/mW

Diode Material

Si

Polarity

Reverse

Spectrums Detected

Infrared

Height

0.205in

Minimum Wavelength Detected

350nm

Peak Photo Sensitivity

0.6A/W

Wavelength of Peak Sensitivity

970nm

Mounting Type

Through Hole

Maximum Wavelength Detected

1100nm

Package Type

TO-8

Diameter

13.97mm

Typical Rise Time

475ns

Series

PIN

Brand

OSI Optoelectronics

Country of Origin

United States