IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

RS Stock No.: 168-4585Brand: IXYSManufacturers Part No.: IXXH80N65B4H1
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Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

430 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

625 W

Number of Transistors

1

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

5 → 30kHz

Transistor Configuration

Single

Dimensions

16.1 x 5.2 x 21.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Energy Rating

5.2mJ

Country of Origin

Philippines

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

P.O.A.

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

1

Available in multiples of 30
1P.O.A.
31P.O.A.
61P.O.A.
91P.O.A.
121P.O.A.
151P.O.A.
181P.O.A.
211P.O.A.
241P.O.A.
271P.O.A.
301P.O.A.
331P.O.A.
361P.O.A.
391P.O.A.
421P.O.A.

P.O.A.

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
Stock information temporarily unavailable.

1

Available in multiples of 30
1P.O.A.
31P.O.A.
61P.O.A.
91P.O.A.
121P.O.A.
151P.O.A.
181P.O.A.
211P.O.A.
241P.O.A.
271P.O.A.
301P.O.A.
331P.O.A.
361P.O.A.
391P.O.A.
421P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

430 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

625 W

Number of Transistors

1

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

5 → 30kHz

Transistor Configuration

Single

Dimensions

16.1 x 5.2 x 21.3mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Energy Rating

5.2mJ

Country of Origin

Philippines

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.